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PMEG3002AEB - Low VF MEGA Schottky barrier diode

General Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package.

Marking code: B1.

Key Features

  • Forward current: 0.2 A.
  • Reverse voltage: 30 V.
  • Very low forward voltage.
  • Ultra small SMD package.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product specification 2002 May 06 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES • Forward current: 0.2 A • Reverse voltage: 30 V • Very low forward voltage • Ultra small SMD package. APPLICATIONS • Ultra high-speed switching • High efficiency DC/DC conversion • Voltage clamping • Inverse-polarity protection • Low voltage rectification • Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package.