• Part: PMEG3002AEB
  • Description: Low VF MEGA Schottky barrier diode
  • Manufacturer: Philips Semiconductors
  • Size: 50.09 KB
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Datasheet Summary

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product specification 2002 May 06 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode Features - Forward current: 0.2 A - Reverse voltage: 30 V - Very low forward voltage - Ultra small SMD package. APPLICATIONS - Ultra high-speed switching - High efficiency DC/DC conversion - Voltage clamping - Inverse-polarity protection - Low voltage rectification - Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small...