PMGD290XN Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
PMGD290XN is Dual N-channel mTrenchMOS extremely low level FET manufactured by NXP Semiconductors.
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PMGD290UCEA | 725 / 500 mA N/P-channel Trench MOSFET |
Nexperia |
PMGD290UCEA | N/P-channel MOSFET |
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.