PMK30EP - P-channel TrenchMOS extremely low level FET

Description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

Low conduction losses due to low on-state resistance 1.3.

NXP Semiconductors

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Datasheet Details

Part number	PMK30EP
Manufacturer	NXP Semiconductors
File Size	163.31 KB
Description	P-channel TrenchMOS extremely low level FET
Datasheet	PMK30EP Datasheet
Additional preview pages of the PMK30EP datasheet.

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Full PDF Text Transcription

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PMK30EP P-channel TrenchMOS extremely low level FET Rev. 04 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low on-state resistance 1.3 Applications Battery management Load switching 1.4 Quick reference data Table 1.

Published: Aug 25, 2014 |