PMK35EP - P-channel TrenchMOS extremely low level FET

Description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

Low conduction losses due to low on-state resistance 1.3.

NXP Semiconductors

📥 Download Datasheet

Datasheet Details

Part number	PMK35EP
Manufacturer	NXP Semiconductors
File Size	289.29 KB
Description	P-channel TrenchMOS extremely low level FET
Datasheet	PMK35EP Datasheet
Additional preview pages of the PMK35EP datasheet.

📁 Similar Datasheet

PMK27XP - P-channel extremely low level FET (Philips)

Other Datasheets by NXP Semiconductors

PMK30EP - P-channel TrenchMOS extremely low level FET
PMK50XP - P-channel TrenchMOS extremely low level FET

Full PDF Text Transcription

Click to expand full text

PMK35EP P-channel TrenchMOS extremely low level FET Rev. 02 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Low conduction losses due to low on-state resistance 1.3 Applications  Battery management  Load switching 1.4 Quick reference data Table 1.

Published: Aug 25, 2014 |