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PMK35EP Datasheet P-channel Trenchmos Extremely Low Level Fet

Manufacturer: NXP Semiconductors

Overview: PMK35EP P-channel TrenchMOS extremely low level FET Rev. 02 — 29 April 2010 Product data sheet 1. Product profile 1.

General Description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in puting, munications, consumer and industrial applications only.

1.2

Key Features

  • Low conduction losses due to low on-state resistance 1.3.

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