PMN23UN - UTrenchMOS ultra low level FET

NXP Semiconductors

General Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

s TrenchMOS™ technology s Very fast switching s Low threshold voltage s Surface mounted package. 1.3.

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PMN23UN utrenchmos ultra low level fet by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PMN23UN
Manufacturer	NXP Semiconductors
File Size	127.11 KB
Description	UTrenchMOS ultra low level FET
Datasheet	PMN23UN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMN23UN µTrenchMOS™ ultra low level FET M3D302 Rev. 01 — 16 June 2004 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s TrenchMOS™ technology s Very fast switching s Low threshold voltage s Surface mounted package. 1.3 Applications s Battery powered motor control s High-speed switch in set top box power supplies s Load switch in notebook computers s Driver FET in DC-to-DC converters. 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 1.75 W s ID ≤ 6.3 A s RDSon ≤ 28 mΩ. 2. Pinning information www.DataSheet4U.