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PMN20ENA - N-channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Logic-level compatible.
  • Extended temperature range Tj = 175 °C.
  • Trench MOSFET technology.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PMN20ENA
Manufacturer nexperia
File Size 289.88 KB
Description N-channel MOSFET
Datasheet download datasheet PMN20ENA Datasheet
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Full PDF Text Transcription

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PMN20ENA 40 V, N-channel Trench MOSFET 30 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 6.
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