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PMN27UP - MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • 1.8 V RDSon rated.
  • Very fast switching.
  • Trench MOSFET technology 1.3.

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Datasheet Details

Part number PMN27UP
Manufacturer NXP Semiconductors
File Size 817.43 KB
Description MOSFET
Datasheet download datasheet PMN27UP Datasheet
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Full PDF Text Transcription

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SO T4 57 PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 — 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V RDSon rated  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  High-side load switch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 27 Max -20 8 -5.
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