PMN27UP Datasheet | NXP Semiconductors

SO T4 57 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 - 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits - 1.8 V RDSon rated - Very fast switching - Trench MOSFET technology 1.3 Applications - Relay driver - High-speed line driver - High-side load switch - Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb =...