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PMN27XPE - MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Fast switching.
  • Trench MOSFET technology.
  • 2 kV ESD protection 1.3.

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Datasheet preview – PMN27XPE

Datasheet Details

Part number PMN27XPE
Manufacturer NXP Semiconductors
File Size 201.10 KB
Description MOSFET
Datasheet download datasheet PMN27XPE Datasheet
Additional preview pages of the PMN27XPE datasheet.

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Full PDF Text Transcription

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PMN27XPE 20 September 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Fast switching • Trench MOSFET technology • 2 kV ESD protection 1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3 A; Tj = 25 °C [1] Conditions Tamb = 25 °C Min -12 - Typ - Max -20 12 -5.
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