PMN20EN Datasheet | NXP Semiconductors

SO T4 57 30 V, 6.7 A N-channel Trench MOSFET Rev. 1 - 30 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits - Logic-level patible - Very fast switching - Trench MOSFET technology 1.3 Applications - Relay driver - High-speed line driver - Low-side loadswitch - Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb =...