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SO T4 57
PMN25EN
30 V, 6.2 A N-channel Trench MOSFET
Rev. 1 — 29 August 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic level compatible Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 6.
PMN25EN Datasheet
