• Part: PMN45EN
  • Description: enhanced logic level FET
  • Manufacturer: NXP Semiconductors
  • Size: 81.54 KB
Download PMN45EN Datasheet PDF
NXP Semiconductors
PMN45EN
PMN45EN is enhanced logic level FET manufactured by NXP Semiconductors.
Trench MOS™ enhanced logic level FET M3D302 Rev. 01 - 27 September 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology. Product availability: PMN45EN in SOT457 (TSOP6). 2. Features s s s s Trench MOS™ technology Very fast switching Low threshold voltage Surface mount package. 3. Applications s s s s Battery powered motor control Load switch in notebook puters High speed switch in set top box power supplies Driver FET in DC to DC converters. 4. Pinning information Table 1: Pin 1,2,5,6 3 4 Pinning - SOT457 (TSOP6), simplified outline and symbol Description drain (d) gate (g) source (s) 1 Top view 2 3 MBK092 Simplified outline 6 5 4 Symbol d g s MBB076 SOT457 (TSOP6) Philips Semiconductors Trench MOS™ enhanced logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = 10 V Tsp = 25 °C VGS = 10 V; ID = 3 A; Tj = 25 °C VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C Typ 32 42 Max 30 5.2 1.75 150 40 50 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the...