PMV20XN Datasheet | NXP Semiconductors

description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits - Low threshold voltage - Very fast switching - Trench MOSFET technology 1.3 Applications - Relay driver - High-speed line driver - Low-side loadswitch - Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 4.8 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ 19 Max Unit 30 12 4.8 25 V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Datasheet pdf - http://..net/ .Data Sheet.co.kr NXP Semiconductors 30 V, 4.8 A N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 mbb076 Simplified outline Graphic symbol SOT23 (TO-236AB) 3. Ordering information Table 3. Ordering information Package Name PMV20XN TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type...