PMV22EN
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 5.2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C
[1]
Conditions Tamb = 25 °C
Min -20
- Typ 17
Max Unit 30 20 5.2 22 V V A mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Datasheet pdf
- http://..net/
.Data Sheet.co.kr
NXP Semiconductors
30 V, 5.2 A N-channel Trench MOSFET
2. Pinning...
