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SO T2
PMV22EN
30 V, 5.2 A N-channel Trench MOSFET
Rev. 1 — 30 March 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 5.2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.
PMV22EN Datasheet
