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PMWD22XN - Dual N-channel uTrenchMOS extremely low level FET

General Description

Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • s Low threshold voltage s Fast switching s Common drain 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMWD22XN Rev. 01 — 15 August 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS extremely low level FET Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Low threshold voltage s Fast switching s Common drain 1.3 Applications s Portable appliances s Battery management 1.4 Quick reference data s VDS ≤ 20 V s RDSon ≤ 26 mΩ s ID ≤ 9.2 A s QGD = 2.7 nC (typ) 2. Pinning information Table 1: Pin 1, 8 2, 3 4 5 6, 7 Pinning Description drain (D) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2) G1 S1 G2 S2 mbl600 Simplified outline 8 5 Symbol D D 1 4 SOT530-1 (TSSOP8) Philips Semiconductors PMWD22XN www.DataSheet4U.