Datasheet4U Logo Datasheet4U.com

PMWD26UN - Dual N-channel uTrenchMOS ultra low level FET

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • s Surface-mounted package s Very low threshold voltage s Low profile s Fast switching 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMW3260DB-TPOU Ultra Low Power LED Optical Mouse Sensor PixArt
PMW3310DH-AQWT Low Power LED Gaming Mouse Sensor PixArt
PMW3310DH-AWQT Low Power LED Gaming Mouse Sensor PixArt
PMW3320DB-TYDU Entry-Gaming Optical Navigation Sensor PixArt
PMW3325DB-TWV1 Optical Gaming Navigation Chip PixArt

Other Datasheets by NXP Semiconductors

Part Number Description
PMWD20XN Dual N-channel uTrenchMOS extremely low level FET
PMWD22XN Dual N-channel uTrenchMOS extremely low level FET
PMWD15UN Dual N-channel uTrenchMOS ultra low level FET
PMWD16UN Dual N-channel uTrenchMOS ultra low level FET
PMWD18UN Dual N-channel uTrenchMOS ultra low level FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMWD26UN Rev. 02 — 19 May 2005 www.DataSheet4U.com Dual N-channel µTrenchMOS ultra low level FET Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Surface-mounted package s Very low threshold voltage s Low profile s Fast switching 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching 1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 3.1 W s ID ≤ 7.8 A s RDSon ≤ 30 mΩ 2.