PMWD26UN
PMWD26UN is Dual N-channel uTrenchMOS ultra low level FET manufactured by NXP Semiconductors.
Rev. 02
- 19 May 2005
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Dual N-channel µTrenchMOS ultra low level FET
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features s Surface-mounted package s Very low threshold voltage s Low profile s Fast switching
1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching
1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 3.1 W s ID ≤ 7.8 A s RDSon ≤ 30 mΩ
2. Pinning information
Table 1: Pin 1 2, 3 4 5 6, 7 8 Pinning Description drain1 (D1) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2) drain2 (D2)
1...
