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PMZB790SN
14 August 2012
60 V, single N-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits • Fast switching • Trench MOSFET technology • Logic-level compatible • Ultra thin package profile of 0.37mm height 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data
Table 1.
PMZB790SN Datasheet
