PSMN010-25YLC Datasheet | NXP Semiconductors

LF PA K N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using Next Power technology Rev. 2 - 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 11.9 9 1.5 5 Max 25 39 30 175 14 10.6 Unit V A W °C mΩ mΩ n C n C Static characteristics Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge NXP Semiconductors N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using Next Power technology 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 1 2 3 4 SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Package Name PSMN010-25YLC LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type...