PSMN012-25YLC Datasheet | NXP Semiconductors

LFPAK N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using Next Power technology Rev. 1 - 25 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Synchronous buck regulator 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12 VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 Min Typ Max Unit - - 25...