PSMN015-60BS Datasheet | NXP Semiconductors

D2 PA K N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Rev. 2 - 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive sources 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 14; see Figure 15 4.7 20.9 44 n C n C m J Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 12.6 Max 60 50 86 175 23.7 14.8 Unit V A W °C mΩ mΩ Static characteristics Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 50 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped NXP Semiconductors N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 2 1 3 SOT404 (D2PAK) [1] It is not possible to make connection to pin 2 3. Ordering...