PSMN015-60PS Datasheet | NXP Semiconductors

w w w . D a t a S h e e t . c o . k r TO -22 0A B N-channel 60 V 14.8 mΩ standard level MOSFET Rev. 3 - 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive sources 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj RDSon Quick reference data Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 50 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped 4.7 n C n C 20.9 Typ Max Unit 60 50 86 175 V A W °C drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance Symbol Parameter Static characteristics 23.7 mΩ 12.6 14.8 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 44 m J D a t a s h e e t p d .Data Sheet.co.kr NXP Semiconductors N-channel 60 V 14.8 mΩ standard level...