PSMN023-40YLC Datasheet | NXP Semiconductors

22 August 2012 N-channel 40 V 23mΩ logic level MOSFET in LFPAK using Next Power technology Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Low parasitic inductance - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Server power supplies - Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 Min -55 Typ Max 40 24 25 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 4.5 V; ID = 5 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 5 A; VDS = 20 V; Fig. 14; Fig. 15 0.9 n C 19 23 mΩ 22 26 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel 40 V 23mΩ logic level MOSFET in LFPAK using Next Power technology Symbol QG(tot) Parameter total gate charge Conditions VGS = 4.5 V; ID = 5 A; VDS = 20 V; Fig. 14; Fig. 15 Min - Typ 4.3 Max - Unit n C 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3...