PSMN3R3-60PL Datasheet | NXP Semiconductors

7 February 2013 TO -2 20A N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using Trench MOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits - - - High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications - - - - Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 175 31 n C n C [1] Min - Typ - Max 60 130 293 Unit V A W Static characteristics drain-source on-state resistance 2.7 3.4 mΩ Dynamic characteristics QG(tot) QGD EDS(AL)S total gate charge gate-drain charge Avalanche ruggedness non-repetitive drainsource avalanche energy [1] ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 - - 372 m J Continuous current is limited by package. Scan or click this QR code to view the latest information for this...