PSMN3R3-60PL Datasheet | Nexperia

N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78 7 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using Trench MOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits - High efficiency due to low switching & conduction losses - Robust construction for demanding applications - Logic level gate 3. Applications - Battery-powered tools - Load switching - Motor control - Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 11 Dynamic characteristics QG(tot) QGD total gate charge gate-drain charge VGS = 10 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 Avalanche...