PSMN3R7-30YLC Datasheet | NXP Semiconductors

LF PA K N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using Next Power technology Rev. 01 - 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Power OR-ing http://..net/ - Server power supplies - Sync rectifier 1.4 Quick reference data Table 1. VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 Typ Max Unit 30 100 79 175 V A W °C drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance Symbol Parameter Static characteristics 4.25 5.15 mΩ 3.3 3.95 mΩ datasheet pdf - http://..net/ NXP Semiconductors N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using Next Power Quick reference data …continued Conditions VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 Min Typ 4.2 Max Unit n C Table 1. Symbol Parameter Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge - 14 - n...