PSMN4R0-25YLC Datasheet | NXP Semiconductors

description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Superjunction technology - Ultra low QG, QGD & QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Power OR-ing - Server power supplies - Sync rectifier 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ Max Unit 25 84 61 175 V A W °C Static characteristics RDSon 4.5 3.5 5.8 4.5 mΩ mΩ Datasheet pdf - http://..net/ .Data Sheet.co.kr NXP Semiconductors N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK Quick reference data …continued Parameter Conditions Min Typ 3.5 Max Unit n C Table 1. Symbol QGD Dynamic characteristics gate-drain charge VGS = 4.5 V; ID = 20 A; VDS 12 V; see Figure 14; see Figure 15 total gate charge VGS = 4.5 V; ID = 20 A; VDS = 12 V; see Figure 14; see Figure 15 QG(tot) - 10.9 - n C 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Package Name PSMN4R0-25YLC LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Type number All information provided in this document is...