PSMN4R0-25YLC Datasheet | Nexperia

description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Superjunction technology - Ultra low QG, QGD & QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Power OR-ing - Server power supplies - Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 Min Typ Max Unit - - 25 V - - 84 A - - 61 W -55 - 175 °C - 4.5 5.8 mΩ - 3.5 4.5 mΩ Nexperia N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK Table 1. Quick reference data …continued Symbol...