PSMN5R9-30YL Datasheet | NXP Semiconductors

LF PA K N-channel 6.1 mΩ 30 V Trench MOS logic level FET in LFPAK Rev. 2 - 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in industrial and munications applications. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - Class-D amplifiers - DC-to-DC converters - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain current total power dissipation drain-source on-state resistance gate-drain charge total gate charge Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 30 78 63 V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C Static characteristics RDSon VGS = 10 V; ID = 20 A; Tj = 25 °C 5.2 6.1 mΩ Dynamic characteristics QGD QG(tot) VGS = 10 V; ID = 60 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 60 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 78 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped 4.8 n C n C - Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 28 m J NXP Semiconductors N-channel 6.1 mΩ 30 V Trench MOS logic level FET in LFPAK 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 mbb076 Simplified outline mb Graphic symbol SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Package Name PSMN5R9-30YL LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type...