PSMN8R0-30YLC Datasheet | NXP Semiconductors

.Data Sheet.co.kr LF PA K N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using Next Power technology Rev. 2 - 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD, QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Load switching - Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 15 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12 Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 8.5 6.7 Max 30 54 42 175 10 7.9 Unit V A W °C mΩ mΩ Static characteristics Datasheet pdf - http://..net/ .Data Sheet.co.kr NXP Semiconductors Quick reference data …continued Parameter gate-drain charge Conditions VGS = 4.5 V; ID = 15 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 15 A; VDS = 15 V; see Figure 14; see Figure 15 Min Typ 2.3 Max Unit n C N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using Next Power technology Table 1. Symbol QGD Dynamic characteristics QG(tot) total gate charge -...