PSMN8R5-60YS Datasheet | NXP Semiconductors

w w w . D a t a S h e e t . c o . k r N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Rev. 01 - 22 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - High efficiency gains in switching power converters - Improved mechanical and thermal characteristics - LFPAK provides maximum power density in a Power SO8 package 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 3 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 76 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped VGS = 10 V; ID = 60 A; VDS = 30 V; see Figure 15 and 14 VGS = 10 V; ID = 60 A; VDS = 30 V; see Figure 14 and 15 Typ Max 60 76 106 175 97 Unit V A W °C m J drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 7.7 39 n C n C D a t a s h e e t .Data Sheet.co.kr NXP Semiconductors N-channel LFPAK 60 V, 8 mΩ standard level...