PSMN8R5-60YS Datasheet | Nexperia

N-channel LFPAK 60 V, 8 mΩ standard level MOSFET 22 July 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 2. Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - High efficiency gains in switching power converters - Improved mechanical and thermal characteristics - LFPAK provides maximum power density in a Power SO8 package 3. Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Motor control - Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C; resistance Fig. 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig....