PSMN9R0-30LL Datasheet | NXP Semiconductors

DFN3333-8 N-channel DFN3333-8 30 V 9 mΩ logic level MOSFET Rev. 5 - 13 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, munications and power supply equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Small footprint for pact designs - Suitable for logic level gate drive sources 1.3 Applications - Battery protection - DC-to-DC converters - Load switching - Power ORing 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 4.5...