1PS59SB20 Datasheet | NXP Semiconductors

FEATURES - Ultra fast switching speed - Low forward voltage - Guard ring protected - Small SMD package. dbook, halfpage DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in an SC-59 small SMD plastic package. APPLICATIONS - High-speed switching - Voltage clamping - Protection circuits. 3 3 1 2 n.c. MLC357 MSA314 PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode Top view Marking code: 20. Fig.1 Simplified outline (SC-59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM Tstg Tj PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current storage temperature junction temperature - - - - 65 - MIN. 40 500 2 +150 125 MAX. V m A A °C °C UNIT 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS IF = 500 m A; see Fig.2 VR = 35 V; see Fig.3 VR = 35 V; Tj = 100 °C; see Fig.3 f = 1 MHz; VR = 0; see Fig.4 - - - 60 MIN. MAX. 550 100 10 90 UNIT m V µA m A p F THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-59 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier...