1PS59SB21 Datasheet | NXP Semiconductors

FEATURES - Ultra fast switching speed - Low forward voltage - Guard ring protected - Small SMD package. APPLICATIONS - High-speed switching - Voltage clamping - Protection circuits. 1 handbook, halfpage DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in an SC-59 small plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode 3 3 2 n.c. MLC357 1 Top view Marking code: 21. MSA314 Fig.1 Simplified outline (SC-59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM Tstg Tj PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current storage temperature junction temperature - - - - 65 - MIN. 40 200 1 +150 125 MAX. V m A A °C °C UNIT 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.2 IF = 10 m A IF = 100 m A IF = 200 m A IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-59 standard mounting conditions. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 reverse current diode capacitance VR = 30 V; note 1; see Fig.3 f = 1 MHz; VR = 0; see Fig.4 - - - - 40 CONDITIONS MIN. MAX. 300 420 550 15 3 50 UNIT m V m V m V µA m A p F VR = 30 V; Tj = 100 °C; note 1; see Fig.3 - VALUE 500 UNIT K/W 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode GRAPHICAL...