1PS74SB23 Datasheet | NXP Semiconductors

FEATURES - Ultra fast switching speed - Low forward voltage - Fast recovery time - Guard ring protected - Small plastic SMD package - Capability of absorbing very high surge current. APPLICATIONS - Rectification - Circuit protection - Polarity protection - Switched-mode power supplies. 1 2 3 MAM421 PINNING PIN 1 2 3 4 5 6 anode cathode anode anode cathode anode DESCRIPTION handbook, halfpage 6 2, 5 1, 3, 4, 6 DESCRIPTION Planar Schottky barrier diode encapsulated in an SC-74 (SOT457) small plastic SMD package. Marking code: P1. Top view Fig.1 Simplified outline SC-74 (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM IRSM Tstg Tj Note 1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel. PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature tp = 8.3 ms; half sinewave; JEDEC method; note 1 tp = 100 µs CONDITIONS - - - - - 65 - MIN. MAX. 25 1 25 0.5 +150 125 UNIT V A A A °C °C 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-74 (SOT457) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS PARAMETER forward voltage reverse current diode capacitance IF = 1 A VR = 20 V; note 1; see Fig.3 VR = 25 V; note 1; see Fig.3 f = 1 MHz; VR = 4 V; see Fig.4 CONDITIONS IF = 100 m A TYP. 260 400 80 - 100 MAX. 300 450 500 1 - UNIT m V m V µA m A p F VALUE 250 UNIT...