1PS74SB43 Datasheet | NXP Semiconductors

FEATURES - Ultra fast switching speed - Low forward voltage - Fast recovery time - Guard ring protected - Small plastic SMD package - Capability of absorbing very high surge current. APPLICATIONS - Rectification - Circuit protection - Polarity protection - Switched-mode power supplies. 1 2 3 MAM421 PINNING PIN 1 2 3 4 5 6 anode cathode anode anode cathode anode DESCRIPTION handbook, halfpage 6 2, 5 1, 3, 4, 6 DESCRIPTION Planar Schottky barrier diode encapsulated in an SC-74 (SOT457) small plastic SMD package. Marking code: P2. Top view Fig.1 Simplified outline SC-74 (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM IRSM Tstg Tj Note 1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel. PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature tp = 8.3 ms; half sinewave; JEDEC method; note 1 tp = 100 µs CONDITIONS - - - - - 65 - MIN. MAX. 40 1 27 0.5 +150 125 UNIT V A A A °C °C 1999 Dec 10 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS see Fig.2; note 1 IF = 0.1 A IF = 1 A IR Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-74 (SOT457) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 10 V; note 1; see Fig.3 VR = 40 V; note 1; see Fig.3 VR = 4 V; f = 1 MHz; see Fig.4 280 460 15 60 65 TYP. MAX. 330 500 40 300 80 UNIT m V m V µA µA p F VALUE 200 UNIT K/W 1999 Dec...