NXP Semiconductors 2PB1219AS
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2PB1219AS |
|---|---|
| Datasheet | 2PB1219AS Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP general purpose transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 500 mA)● Low voltage (max. 50 V)
● Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
● General purpose switching and amplification.DESCRIPTION
handbook, halfpage 2PB1219A PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 PNP transistor in a SOT323; SC70 plastic package. NPN complement: 2PD1820A. 1 3 MARKING TYPE NUMBER 2PB1219AQ 2PB1219AR 2PB1219AS Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) D∗Q D∗R D∗S Fig.1 Simplified outline (SOT323; SC70) and symbol. 1 Top view 2 MAM048 2 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323; SC70 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
