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2PB709AW - PNP Transistor

General Description

PNP transistor in an SC-70 (SOT323) plastic package.

N7 N9

1.

= p: made in Hong Kong.

= t: made in Malaysia.

Key Features

  • High collector current (max. 100 mA).
  • Low collector-emitter saturation voltage (max. 500 mV).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 2PB709AW PNP general purpose transistor Product data sheet 2002 Jun 26 NXP Semiconductors PNP general purpose transistor Product data sheet 2PB709AW FEATURES • High collector current (max. 100 mA) • Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS • General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in an SC-70 (SOT323) plastic package. NPN complement: 2PD601AW MARKING TYPE NUMBER 2PB709AQW 2PB709ARW 2PB709ASW MARKING CODE(1) N5* N7* N9* Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. handbook, halfpage 1 Top view 3 1 2 MAM048 3 2 Fig.1 Simplified outline SC-70 (SOT323) and symbol.