NXP Semiconductors 2PD1820AR
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2PD1820AR |
|---|---|
| Datasheet | 2PD1820AR Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN general purpose transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 500 mA)● Low voltage (max. 50 V)
● Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
● General purpose switching and amplification, especially for portable equipment.DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package. PNP complement: 2PB1219A. handbook, halfpage 2PD1820A PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 MARKING 2 TYPE NUMBER 2PD1820AQ 2PD1820AR 2PD1820AS Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) A∗Q A∗R A∗S Fig.1 Simplified outline (SC-70; SOT323) and symbol. 1 Top view 2 MAM336 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open base open collector CONDITIONS open emitter MIN. − − − − − − − −65 − −65 MAX.
