2PD1820AS Datasheet | NXP Semiconductors

FEATURES - High current (max. 500 m A) - Low voltage (max. 50 V) - Low collector-emitter saturation voltage (max. 600 m V). APPLICATIONS - General purpose switching and amplification, especially for portable equipment. DESCRIPTION NPN transistor in an SC-70; SOT323 plastic package. PNP plement: 2PB1219A. handbook, halfpage 2PD1820A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 1 MARKING TYPE NUMBER 2PD1820AQ 2PD1820AR 2PD1820AS Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) A∗Q A∗R A∗S Fig.1 Simplified outline (SC-70; SOT323) and symbol. 1 Top view 2 MAM336 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open base open collector CONDITIONS open emitter MIN. - - - - - - - - 65 - - 65 MAX. 60 50 5 500 1 200 200 +150 150 +150 UNIT V V V m A A m A m W °C °C °C 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PD1820AQ 2PD1820AR 2PD1820AS h FE VCEsat Cc f T Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. DC current gain collector-emitter saturation voltage collector capacitance transition frequency IC = 500 m A; VCE = 10 V; note 1 IC = 300 m A; IB = 30 m A; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 °C IC = 0; VEB = 4 V IC = 150 m A; VCE = 10 V; note 1 85 120 170 40 - - - - - MIN. PARAMETER...