Download 2PD1820A Datasheet PDF
Kexin Semiconductor
2PD1820A
2PD1820A is NPN General Purpose Transistor manufactured by Kexin Semiconductor.
Features High current (max. 500 m A). Low voltage (max. 50 V). Low collector-emitter saturation voltage (max. 600 m V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating 60 50 5 500 1 200 200 -65 to +150 150 -65 to +150 625 Unit V V V m A A m A m W K/W 1 Emitter 2 Base 3 Collector Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PD1820AQ 2PD1820AR 2PD1820AS Collector-emitter saturation voltage Collector capacitance Transition frequency - Pulse test: tp 300 ìs; ä 0.02. Symbol Testconditons ICBO IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 IEBO IC = 0; VEB = 4 V Min Typ Max Unit 10 n A 5 ìA 10 n A h FE IC = 150 m A; VCE = 10 V; - 85 VCE(sat) IC = 300 m A; IB = 30 m A; - Cc IE = ie = 0; VCB = 10 V; f = 1 MHz f T IC = 50 m A; VCE = 10 V; f = 100 MHz;- 150 170 240 340 600 m V 15 p F MHz h FE Classification TYPE Marking 2PD1820AQ AQ 2PD1820AR 2PD1820AS .kexin..cn...