NXP Semiconductors 74LVC1G125
The 74LVC1G125 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.FEATURES
● Wide supply voltage range from 1.65 V to 5.5 V● High noise immunity
● Complies with JEDEC standard: – JESD8-7 (1.65 V to 1.95 V) – JESD8-5 (2.3 V to 2.7 V) – JESD8B/JESD36 (2.7 V to 3.6 V).
● ±24 mA output drive (VCC = 3.0 V)
● CMOS low power consumption
● Latch-up performance exceeds 250 mA
● Direct interface with TTL levels
● Inputs accept voltages up to 5 V
● Multiple package options
● ESD protection: – HBM EIA/JESD22-A114-B exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V.
● Specified from −40 °C to +85 °C and −40 °C to +125 °C.
DESCRIPTION
74LVC1G125 This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1G125 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH level at pin OE causes the output to assume a high-impedance OFF-state.