A2I09VD030GN Description
NXP Semiconductors Technical Data Document Number: 2, 10/2022 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
A2I09VD030GN Key Features
- On-chip matching (50 ohm input, DC blocked)
- Designed for digital predistortion error correction systems
- Optimized for Doherty