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NXP Semiconductors Technical Data
Document Number: A2I09VD030N Rev. 2, 10/2022
RF LDMOS Wideband Integrated Power Amplifiers
The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
900 MHz • Typical Single−Carrier W−CDMA Performance: VDD = 48 Vdc,
IDQ1(A+B) = 46 mA, IDQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
PAE (%)
ACPR (dBc)
920 MHz 940 MHz 960 MHz
34.4
19.9
–45.0
34.5
20.0
–44.6
34.3
19.8
–44.3
700 MHz • Typical Single−Carrier W−CDMA Performance: VDD = 48 Vdc,
IDQ1(A+B) = 50 mA, IDQ2(A+B) = 150 mA, Pout = 4 W Avg.
A2I09VD030GN Datasheet
