A2I20H080GNR1
Key Features
- Advanced High Performance In--Package Doherty
- On--Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature pensation with
- Part: A2I20H080GNR1
- Description: RF LDMOS Wideband Integrated Power Amplifiers
- Manufacturer: NXP Semiconductors
- Size: 414.28 KB