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Freescale Semiconductor Technical Data
Document Number: A2I20H080N Rev. 0, 3/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20H080N wideband integrated circuit is an asymmetrical Doherty
designed with on--chip matching that makes it usable from 1800 to 2200 MHz.
This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
1800 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VPVDGroDSb2=aBb3=il0it1yV.2od5nc,VCIdDCcQD,1PFA.o(=1u)t3=01m3A.5,
WIDQA2vAg=.,
1In9p5umt SAi,gnVaGlSP1ABR=
1.35 Vdc, = 9.9 dB @
0.01%
Frequency 1805 MHz 1840 MHz 1880 MHz
Gps (dB) 28.4 28.2 27.9
PAE (%)
42.1
43.4
42.9
ACPR (dBc)
–36.9
–38.6
–34.0
1.
A2I20H080NR1 Datasheet
