• Part: A2I20H080NR1
  • Description: RF LDMOS Wideband Integrated Power Amplifiers
  • Manufacturer: NXP Semiconductors
  • Size: 414.28 KB
Download A2I20H080NR1 Datasheet PDF
A2I20H080NR1 page 2
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A2I20H080NR1 page 3
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A2I20H080NR1 Key Features

  • Advanced High Performance In--Package Doherty
  • On--Chip Matching (50 Ohm Input, DC Blocked)