• Part: A2I35H060GNR1
  • Description: RF LDMOS Wideband Integrated Power Amplifiers
  • Manufacturer: NXP Semiconductors
  • Size: 485.17 KB
A2I35H060GNR1 Datasheet (PDF) Download
NXP Semiconductors
A2I35H060GNR1

Overview

  • Advanced High Performance In--Package Doherty
  • On--Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
  • Designed for Digital Predistortion Error Correction Systems A2I