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A2I35H060NR1 - RF LDMOS Wideband Integrated Power Amplifiers

Product Overview

NXP

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A2I35H060NR1 RF LDMOS Wideband Integrated Power Amplifiers by NXP - Datasheet Preview — Datasheet preview – A2I35H060NR1

Datasheet Details

Part number	A2I35H060NR1
Manufacturer	NXP
File Size	485.17 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	A2I35H060NR1 Datasheet
Additional preview pages of the A2I35H060NR1 datasheet.

Product details

Features

Advanced High Performance In--Package Doherty.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2).
Designed for Digital Predistortion Error Correction Systems A2I.

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Published: Mar 6, 2019 |