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Freescale Semiconductor Technical Data
Document Number: A2I35H060N Rev. 0, 4/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
3500 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance: PVVrDGoDSb2a=Bb2=il8it1yV.3odncV,CdIcDC,QDP1FoA.u=t(1=)5610mWA,AIDvQg.2,AIn=p1u4t 1SimgnAa,lVPGASR1B==9.19.6dBVd@c, 0.01%
Frequency 3400 MHz 3500 MHz 3600 MHz
Gps (dB) 24.0 24.0 23.7
PAE (%)
32.5
32.4
31.3
ACPR (dBc)
–33.4
–37.0
–39.
A2I35H060NR1 Datasheet
