- Part: A2I35H060NR1
- Description: RF LDMOS Wideband Integrated Power Amplifiers
- Manufacturer: NXP Semiconductors
- Size: 485.17 KB
Overview
- Advanced High Performance In--Package Doherty
- On--Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
- Designed for Digital Predistortion Error Correction Systems A2I