A3M34SL039 Datasheet | NXP Semiconductors

description The A3M34SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. munications to the module can be acplished via I2C. 2 Typical performance Table 1. 3300- 3700 MHz - Typical LTE performance Pout = 8 W Avg., VDD = 29 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 d B @ 0.01% Probability on CCDF. [1] Carrier Center Frequency Gain (d B) ACPR (d Bc) 3310 MHz - 28.0 3500 MHz - 31.6 3690 MHz - 29.6 [1] All data measured with device soldered in NXP reference circuit. PAE (%) 33.2 3 Features and benefits - Advanced high performance in-package Doherty - Fully matched (50 ohm input/output, DC blocked) - Designed for low plexity digital linearization systems - Autobias on power up - Temperature sensing - I2C digital interface - Embedded registers and DACs for setting bias conditions - Tx Enable control pin for TDD operation NXP Semiconductors 4 Pinning information 4.1 Pinning Airfast Power Amplifier Module with Autobias Control Figure 1. Pin configuration Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 - 1 July 2024 © 2024 NXP B.V. All rights...