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A3M34SL039 - Airfast Power Amplifier

Download the A3M34SL039 datasheet PDF. This datasheet also covers the A3M34SL039I variant, as both devices belong to the same airfast power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The A3M34SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint.

Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads.

Key Features

  • Advanced high performance in-package Doherty.
  • Fully matched (50 ohm input/output, DC blocked).
  • Designed for low complexity digital linearization systems.
  • Autobias on power up.
  • Temperature sensing.
  • I2C digital interface.
  • Embedded registers and DACs for setting bias conditions.
  • Tx Enable control pin for TDD operation NXP Semiconductors 4 Pinning information 4.1 Pinning A3M34SL039 Airfast Power Amplifier Module with Autobias.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (A3M34SL039I-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by NXP Semiconductors

Part Number Description
A3M34SL039I Airfast Power Amplifier
A3M34SL039S Airfast Power Amplifier
A3M35TL039 Airfast Power Amplifier Module
A3M36SL037 Airfast Power Amplifier
A3M36SL037I Airfast Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
A3M34SL039 Airfast Power Amplifier Module with Autobias Control Rev. 1 — 1 July 2024 Product data sheet 1 General description The A3M34SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD LTE and 5G systems. The module integrates an autobias feature with the option to overwrite production settings. Autobias automatically sets and regulates transistor bias over temperature upon power up. An integrated sensor for monitoring temperature is also present. Communications to the module can be accomplished via I2C.