A3M35TL039 Datasheet | NXP Semiconductors

description The A3M35TL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field- proven LDMOS power amplifiers are designed for TDD and FDD LTE systems. 2 Typical performance Table 1. 3300- 3700 MHz - Typical LTE Performance Pout = 7 W Avg., VDD = 26 Vdc, 1 y 20 MHz LTE, Input Signal PAR = 8 d B @ 0.01% Probability on CCDF. (1) Carrier Center Frequency Gain (d B) ACPR (d Bc) PAE (%) 3310 MHz - 25.1 3400 MHz - 28.0 3500 MHz - 29.7 3600 MHz - 31.0 3690 MHz - 29.6 1. All data measured with device soldered in NXP reference circuit. 3 Features and benefits - Frequency: 3300- 3700 MHz - Advanced high performance in- package Doherty - Fully matched (50 ohm input/output, DC blocked) - Designed for low plexity analog or digital linearization systems NXP Semiconductors 4 Pinning information 4.1 Pinning Pin 1 index area GND 1 N.C. 2 VDC2 ( 1) 3 VDC1 4 RFin...