Click to expand full text
NXP Semiconductors Technical Data
Document Number: A3T21H456W23S Rev. 1, 08/2018
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
2100 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.35 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
D
Output PAR
ACPR
(%)
(dB)
(dBc)
2110 MHz
14.8
49.5
8.0
–30.3
2140 MHz
15.3
48.9
8.0
–31.1
2170 MHz
15.5
48.6
7.8
–31.3
2200 MHz
15.5
47.9
7.7
–32.
A3T21H456W23SR6 Datasheet
