A3T21H456W23SR6 Datasheet | NXP Semiconductors

Features - Advanced high performance in--package Doherty - Designed for wide instantaneous bandwidth applications - Greater negative gate--source voltage range for improved Class C operation - Able to withstand extremely high output VSWR and broadband operating conditions - Designed for digital predistortion error correction systems 2110- 2200 MHz, 87 W AVG., 30 V AIRFAST RF POWER LDMOS TRANSISTOR ACP--1230S--4L2S Carrier 6 VBWA(2) RFin A/VGSA 1 5 RFout A/VDSA (1) RFin B/VGSB 2 4 RFout B/VDSB Peaking (Top View) 3 VBWB(2) Figure 1. Pin Connections 1. Pin connections 4 and 5 are DC coupled and RF independent. 2. Device can operate with VDD current supplied through pin 3 and pin 6.  2018 NXP B.V. RF Device Data NXP Semiconductors A3T21H456W23SR6 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) CW Operation @ TC = 25C when DC current is fed through pin 3 and pin 6 Derate above 25C VDSS VGS VDD Tstg TC TJ CW - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 - 40 to +150 - 40 to +225 131...