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A5G35S004N
Airfast RF Power GaN Transistor
Rev. 4 — November 2022
This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.
3500 MHz
• Typical Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 12 mA, Pout = 24.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps (dB)
hD
Output PAR
ACPR
(%)
(dB)
(dBc)
3400 MHz
19.3
19.5
9.9
–38.7
3500 MHz
19.4
20.0
9.7
–40.3
3600 MHz
18.8
20.4
9.4
–42.1
1. All data measured in reference circuit with device soldered to printed circuit board.
3700–4000 MHz
• Typical Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 10 mA, Pout = 28 dBm Avg., Input Signal PAR = 9.9 dB @ 0.
A5G35S004N Datasheet
