NXP Semiconductors A5G35S004N
Airfast RF Power GaN Transistor
| Part No. | A5G35S004N |
|---|---|
| Datasheet | A5G35S004N Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast RF Power GaN Transistor |
| Buy | Stock & Price |
FEATURES
● High terminal impedances for optimal broadband performance● Designed for low complexity linearization systems
● Universal broadband driver
● Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S004N 3300–4300 MHz, 24.5 dBm Avg., 48 V AIRFAST RF POWER GaN TRANSISTOR DFN 4.5 y 4 PLASTIC N.C. 1 VGS 2 N.C. 3 6 N.C. 5 VDS 4 N.C. (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections NXP reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. NXP Semiconductors Table 1.
MAXIMUM RATINGS
Rating Symbol Value Unit Drain−Source Voltage Gate−Source Voltage Operating Voltage Maximum Forward Gate Current @ TC = 25°C Storage Temperature Range Case Operating Temperature Range Maximum Channel Temperature Table 2. Recommended Operating Conditions VDSS 125 Vdc VGS –16, 0 Vdc VDD 55 Vdc IGMAX 0.74 mA Tstg – 65 to +150 °C TC – 55 to +150 °C TCH 225 °C Characteristic Symbol Value Unit Operating Voltage Table 3.
