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A5G35S004N - Airfast RF Power GaN Transistor

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Overview

A5G35S004N Airfast RF Power GaN Transistor Rev.

4 — November 2022 This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.

Key Features

  • High terminal impedances for optimal broadband performance.
  • Designed for low complexity linearization systems.
  • Universal broadband driver.
  • Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S004N 3300.
  • 4300 MHz, 24.5 dBm Avg. , 48 V.

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